| 摘要 |
PURPOSE:To obtain an ultrafine semiconductor device in which distances between diffused layers and between metal wires less than the minimum size of a photoetching method and a method of manufacturing the same by providing a groove formed on the surface of an oxidized film particularly at the side of a semiconductor film and of a substrate and the insulating film directly uhder the oxidized film of the side surface. CONSTITUTION:A nitrided film 15 and polysilicon 14 are selectively photolithographically removed on a silicon substrate 11, the side surface of the formed polysilicon 14a is oxidized, thereby growing an oxidized film or the like. Subsequently, the surface of the surface exposed from the substrate 11 by medicine treatment is etched in the deisired depth, forming parallel grooves 17a, and an oxdized film 18'a is allowed to remain on the side surface of the groove. The steps further continue, but the pitch P between the bases becomes a half as compared with the conventional method in the width and interval of the polysilicons 14a, 14b, 14c, and the interval between the metal electrodes 22 and 23 is defined by the oxidized film 16, thereby reducing smaller than the minimum size of the photolithographic removal. |
