| 摘要 |
PURPOSE:To effectively form an ultrafine pattern by adhering a glass layer on the surface of an Si substrate, emitting a light to the layer and selectively and self-aligningly injecting an impurity in the substrate. CONSTITUTION:A field oxidized film 2 is formed on an N type semiconductor substrate 1, a base diffused layer 3' in which a P type impurity is diffused is formed, and a phosphorus glass layer 4 containing P2O5 of 3-8mol% is formed by a CVD method in a thickness of approx. 0.5mum on the layer 3'. When a light P of a ruby laser or the like is emitted to the surface of the layer 4, the light P is absorbed on the surface of the substrate 1, is then converted into thermal energy, the emitted part is heated, and phosphorus in the glass 4 is diffused as an impurity in the substrate 1. In this manner, a shallow emitter diffused layer 5 is formed on the surface of the region 3'. |
