As overload protection in field-effect transistors (FET) used as circuit breakers, it is proposed to allow a current limiting regulator to act on the control voltage of the FET above a certain load current value in such a manner that its residual resistance is increased. An overload protection responding to the residual voltage between drain terminal and source terminal of the FET will operate more quickly and in a more defined manner due to the increase in residual resistance produced by the current regulator.
申请公布号
DE3121754(C1)
申请公布日期
1982.12.09
申请号
DE19813121754
申请日期
1981.06.01
申请人
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE
发明人
RUMOLD, GERHARD, ING.(GRAD.), 8521 BUBENREUTH, DE;RUSS, GEORG, 8520 ERLANGEN, DE