发明名称 Ion implanter.
摘要 <p>An ion implanter according to the present invention comprises an ion source (1), a sample holder for supporting a sample (5) to be implanted with ions, and scanning means (6, 7) for scanning an ion beam (3) extracted from the ion source. Moreover, the sample (5) is located in a position where it can avoid neutral particles propagating rectilinearly from the ion source. An example of the scanning means is constructed of an air-core coil (6) disposed between the ion source (1) and the sample (5), and an A.C. power supply (7) for providing air-core coil with alternating current.</p>
申请公布号 EP0066175(A1) 申请公布日期 1982.12.08
申请号 EP19820104325 申请日期 1982.05.17
申请人 HITACHI, LTD. 发明人 TOKIGUCHI, KATSUMI;SAKUDO, NORIYUKI;KOIKE, HIDEMI
分类号 H01J37/147;H01J37/317;H01L21/265;(IPC1-7):01J37/317;01J37/147 主分类号 H01J37/147
代理机构 代理人
主权项
地址