Method for manufacturing semiconductor device.

摘要

The invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a conductive material pattern (6) covered with a first insulating film (5) directly or through an insulating layer (4) on a semiconductor substrate (1); forming a second insulating film (10) on the surface of the semiconductor substrate (1) and the side surfaces of the conductive material pattern (6); forming a masking material layer (11) to cover the entire surface of the structure; and etching the masking material layer (11) by anisotropic etching to form a masking material pattern (11 min ) on the surface part of the second insulating film (10) formed on the side surfaces of the conductive material pattern (6). The masking material pattern (11 min ) is used as a mask to form self-aligned contact holes (12) or self-aligned impurity regions.