| 摘要 |
<p>PURPOSE:To prevent the crystal side from being polluted making the characteristics reliable by a method wherein the luminous elements completing the cleaving process are maintained in the oxidized atmosphere or proper oxidized solution and the nonconductive film is formed on the crystal sides. CONSTITUTION:The multi eptaxial layers 2-5 are provided on the surface of the substrate 1 and the electrodes 7, 8 are provided on the other surface of the substrate 1. The nonconductive film 13 is formd on a part or overall sides covering at least the substrate 1 and the epitaxial layers 2-5. The nonconductive film 13 is formed after the integrated semiconductor elements are separated into numerous elements. Said film 13 is immersed and boiled in H2O2+H2O solution so that constituent elements of the element crystal, especially the oxide layer of Ga, Al may be formed.</p> |
