| 摘要 |
PURPOSE:To supply a potential to a substrate without additional manufacturing process by a method wherein a base region which has the same type of conductivity as the substrate is formed on an epitaxial layer and netal electrodes are formed on the base region and the potential is to those electrodes. CONSTITUTION:After a buried N<+> type collector region 2 of the first N-P-N transistor 3 and a buried N<+> type collector region 9 of the second N-P-N transistor 8 are formed on a P type semiconductor substrat 1, an N<-> type epitaxial layer 22 is formed in a region 27. And grooves which reach the substrate 1 are provided to the main surface 20 and dielectric regions 15-18 are formed. Then a P type base region 11 of the transistor 8 and a P type region 23 are formed. And N<+> type emitter regions 6 and 12, N<+> type collector electrode diffusion regions 7 and 13 and on N<+> type region 24 are formed. Then metal electrodes 25 and 26 are formed on the regions 23 and 24. When a specified potential is given to the electrodes 25 and 26, the potential is given to the substrate 1. |
