| 摘要 |
PURPOSE:To form isolation region of small width, by a method wherein polycrystalline semiconductor or amorphous semiconductor is formed on side surface of a groove provided at isolation region and then heated in oxidizing atmosphere. CONSTITUTION:SiO2 film 21 and Si3N4 film 22 are formed on Si substrate 20, and a groove 24 is formed using a photo resist film 23. Boron ion implantation region 25 is formed at the bottom of the groove 24, and then the photo resist film 23 is removed. SiO2 film 26 is formed on the groove 24 and polycrystalline Si thin film 27 is formed on whole surface. The polycrystalline Si thin film except that in the groove side surface is removed by etching, and remaining polycrystalline si thin film is oxidized by pressurized steam of 6-10kg/cm<2> at 900-1,000 deg.C for example, thereby the groove 24 is filled with SiO2 film 30, 31. P<+> type channel stopper region 33 is formed from the boron ion implantation region 25 as diffusion source. |
