Semiconductor device and method of manufacturing the same

摘要

This invention relates to a semiconductor device which comprises a monocrystalline silicon substrate, a first insulating film formed in a first region on one major surface of the monocrystalline silicon substrate, a first monocrystalline silicon layer formed on the first insulating film, a second insulating film covering a side surface of the first monocrystalline silicon layer, a first polysilicon layer formed to cause a side surface of the first polysilicon layer to contact the second insulating film, and a second monocrystalline silicon layer, having a side surface contacts the first polysilicon layer, formed in a second region of the one major surface of the monocrystalline silicon substrate, and dielectrically isolated from the first monocrystalline silicon layer, and a method of manufacturing the same.