发明名称 Power FET short circuit protection
摘要 A protection circuit for a semiconductor device such as a field effect transistor is disclosed having an oscillator which is connected to both the gate turn on circuitry and to the drain-source circuit of the field effect transistor for sensing the voltage of the drain-source circuit and for turning off cyclically the field effect transistor upon the simultaneous occurrence of a gate turn on signal to the gate of the transistor and high drain-source voltage.
申请公布号 US4363068(A) 申请公布日期 1982.12.07
申请号 US19800179347 申请日期 1980.08.18
申请人 SUNDSTRAND CORPORATION 发明人 BURNS, DENNIS A.
分类号 H03K17/082;(IPC1-7):H02H3/20 主分类号 H03K17/082
代理机构 代理人
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