| 摘要 |
PURPOSE: To produce a vertical wall pattern in a photoresist by, while using a dry-etching selective mask layer as an etching mask, to form a specified pattern in an ion-milling mask layer. CONSTITUTION: TiW 40 is patterned by a plasma method which uses CF4 gas or the equivalent. Then, the TiW 40 is used as a mask for a thick resist 40 below it. A resist 38 at a top part level is partially or entirely removed by etching, and at the same time, an ion-milling mask layer 42 is etched. The vertical wall of the ion-milling mask layer 42 is attained by dry-etching at a low pressure. A 3 level mask 36 of the vertical sidewall is used as an etching mask for ion-milling an etching interference trench 46. |
