发明名称 PRODUCTION OF THIN-FILM TRANSISTOR MATRIX AND THIN-FILM TRANSISTOR MATRIX
摘要 <p>PURPOSE: To prevent the yield of a liquid crystal display panel from lowering by forming grooves in protective insulating films in regions which are separating regions between adjacent pixel electrodes, then forming a transparent conductive film over the entire surface and selectively etching away this transparent conductive film. CONSTITUTION: An SiN film 10 which is a protective film is formed over the entire surface and thereafter, a photoresist is applied on the film and a resist mask 11 is formed in such a manner that openings are formed on a drain electrodes 8A and a storage capacitor 201A. Next, the SiN film 10 is etched away via the resist mask 11 to form contact holes 12, 13 and slit-like grooves 10A, 10B are formed at the SiN film 10 on both sides of a drain bus line 202 which is the separating region between the pixel electrodes. Next, a photoresist is formed over the entire surface and is exposed and developed to selectively form the resist mask in the regions where the pixel electrodes are to be formed. An ITO film 14 is then etched away via the resist mask, by which the pixel electrodes 14A, 14B are selectively formed in the adjacent pixel regions.</p>
申请公布号 JPH08106107(A) 申请公布日期 1996.04.23
申请号 JP19940240136 申请日期 1994.10.04
申请人 FUJITSU LTD 发明人 INOUE ATSUSHI;OZAKI KIYOSHI;KONDO NAOTO;DEJIMA YOSHIO
分类号 G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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