| 摘要 |
PURPOSE:To obtain the light emitting device which can deflect a light beam, in the light emitting device having a double heterostructure wherein a first conductive layer which oscillates laser light by second and third semiconductor layers whose forbidden band widths are larger than that of the first layer, by providing an electrode having a light receiving cut out part on the side of a stripe region set in the first conductive layer. CONSTITUTION:On an N type InP substrate 1, an N type InP clad layer 2, an InGaASP active layer 3 having the stripe region, and a P type InP clad layer 4 are layered and grown. An N side electrode 6 is deposited on the entire back surface of the substrate 1. A stripe shaped P side electrode 5 is formed on the layer 4. Parts of the layer 4 are exposed on both sides of the electrode 5 in this way. Light is irradiated on the stripe region provided in the layer 3 through said parts and the light is absorbed by the region. In this constitution, a transparent material is used for the layer 4. The forbidden band widths of the layers 4 and 2 are larger than the substrate 1. The composition of the layer 3 is selected in corresponding with the wavelength of the irradiated light. Thus the intensity distribution of the light from the element is made to be asymmetrical distribution. |
