| 摘要 |
PURPOSE:To avoid the decrease in electron mobility on an electron storing layer, when a low impurity concentration GaAs layer and an n type AlGaAs layer are provided on a semi-insulating substrate and a heterostruction semiconductor is formed, by porviding a highly resistive AlGaAs layer between the substrate and the GaAs layer. CONSTITUTION:On the Cr doped semi-insulating GaAs substrate 11, a non-doped highly resistive GaAs layer 12, a non-doped highly resistive AlGaAs layer 13, a non-doped GaAs layer 14, an n type Al GaAs layer 15, and an n type GaAs layer 16 are layered and grown by molecular beam epitaxial method. Then the central part of the layer 16 is etched away. A Schottky gate electrode 17 with a three layered structure comprising Ti-Pt-Au is attached to the exposed layer 15. A source electrode 18 and a drain electrode 19 are deposited on both sides of the electrode 17 on the layer 16, with the contact being separated by SiO2 films 20. In this constitution, the thin electron storing layer 21 is formed on the surface of the layer 14 when the layer 15 is grown on the layer 14 at the heterostruction interface. |
