| 摘要 |
<p>A method is provided for fabricating three-phase charge coupled devices having closely spaced electrodes. A two-level metalization technique is employed, the levels of metal being separated by an insulative layer of oxide. The oxide layer is produced by anodizing a portion of the first metal layer through diodes, applying a voltage to the back of the silicon substrate slice. The diodes are forward biased for the anodization step, and are reverse biased during use of the device, so as not to interfere with its operation.</p> |
