| 摘要 |
PURPOSE:To contrive the fineness of wiring and the improvement of yield by a method wherein the first resist mask is applied and a wiring layer is made by plating with the same thickness as that of the mask or thinner and the second resist mask is applied to provide a projected electrode by plating. CONSTITUTION:Pt wirings 2 exist on an Si substrate 1 formed elements. A photo resist pattern 3 with thicker than planned Au plating thickness or the same thickness is provided by selecting forming condition. After applying Au plating with predetermined thickness, the resist 3 is removed, and the second photo resist pattern 5 is made. At that time, no cracked sections exist at the Au cross section. Therefore, a thin film is acceptable and no pin holes are generated. Next, a projected electrode 6 is provided by Au plating to remove the resist and a semiconductor device is completed. In this composition, a semiconductor device having plating wiring can be made with good yield and high productivity. |
