| 摘要 |
PURPOSE:To improve light emitting efficiency, by providing an auxiliary p type InGaAsP active layer on an InGaAsP active layer through a p type InP confining layer, and utilizing the electrons, which are inputted in the active region but leaked out without contributing the light emission, for light emiision in the auxiliary active layer. CONSTITUTION:On an n type InP layer 1 which is to become a confining layer, an InGaAsP active layer 2 and a p type InP confining layer 3 are grown. In addition, an auxiliary p type InGaAsP active layer 4 is newly formed on the layer 3. Then a p type InP confining layer 5 and an auxiliary p type InGaAsP layer 6 are again grown on the layer 4. The surface is coated by a p type InP confining layer 7. In this constitution, the composition of the active layer 3 is the same as the composition of the auxiliary active layers 4 and 6, and the thickness is also the same value of about 0.05-0.3mum. The thicknesses of the confining layers 3 and 5 are seected within the range of 0.1-0.3mum. Thus the temperature increase due to the leaked carriers is avoided, and a threshold current is decreased. |
