| 摘要 |
PURPOSE: To provide a plasma processing device having the surface of a fine hole sufficiently covered with a ceramic material even in the case of the formation of the hole through a high-frequency electrode, and having the capability of ensuring freedom from the contamination of film forming atmosphere, as well as forming a film having excellent characteristics. CONSTITUTION: Regarding a plasma processing device equipped with the high-frequency electrode where at least a section of metal exposed to a plasma is covered with a ceramic material, a gas discharge amount from the electrode is set between 10<-8> Torr.L/sec. and 10<-6> Torr.L/sec., or less. Furthermore, regarding the plasma etching device equipped with the high frequency electrode where at least a section of metal exposed to a plasma, the ceramic material is a sintered ceramic material. |
