| 摘要 |
PROBLEM TO BE SOLVED: To produce an integrated circuit having power device and nonvolatile memory cells by injecting a dopant at a specified angle in the upper side of the integrated circuit to form lower channel regions at conductive gate regions, and the dose and energy are determined so as to form the channel regions just after injecting. SOLUTION: This manufacturing method forms semiconductor regions R1, R2, R6 having power devices and memory cells inside on a semiconductor substrate, forming conductive gate regions for the power devices and memory cells on the separated semiconductor regions, and implanting a first dopant along an inclined direction at a specified angle vertical with respect to the upper side of an integrated circuit in the semiconductor regions R1, R2 for the power devices to form channel regions 29, 30 underlying the conductive gate region. The dose and energy of this implantion are determined so that the channel regions are formed just after the first dopant implantion, without thermal diffusion at high temps. |
