| 摘要 |
PURPOSE:To obtain uniform diode characteristics, and to improve the yield of the diode array by making the forming width of a photoelectric converting film larger than the forming width of upper and lower electrodes. CONSTITUTION:In the thin-film diode array consisting of a large number of the lower electrodes 9 for extracting signals coated and formed in parallel onto a glass substrate 8, an amorphous silicon film 11 shaped onto the lower electrodes 9 and the upper electrode 12 on the film 11, the forming width d1 of the amorphous silicon photoelectric converting film 11 arranged among the lower electrodes 9 and the upper electrode 12 is made larger than the forming width d2 of the lower electrodes 9 and the forming width d3 of the upper electrode 12. Accordingly, the lower electrodes are subject to no influence of the form of the end surface of a pattern hang, etc. in case of the etching of the end surface of the amorphous silicon film, and the diode array having uniform diode characteristics is obtained. |
