| 摘要 |
PURPOSE:To increase the current density of an emitter by forming a reticulate emitter region surrounding a base region in a main surface and an emitter electrode and shaping a wiring layer connecting the base region in common through an insulating film. CONSTITUTION:A P type semiconductor layer 2 as the base layer is formed onto an N type semiconductor substrate 1 as a collector, and an N type diffusion layer 3 is shaped reticulately to the surface of the P type semiconductor layer 2 and used as the emitter region. An oxide film 4 is molded to the surface to protect the surface of a junction. The emitter electrode 5 is formed reticulately onto the emitter region 3. An oxide film 7 is shaped to the surface through a CVD method, etc. Openings are formed to the upper section of base electrodes 6, and a beltlike base electrode 8 connecting the base electrodes 6 is shaped. |
