| 摘要 |
PURPOSE:To reduce the field effect from outside, by laminating an impurity doped semi-insulating polycrystalline Si film and Si oxide after adhering a thin non-doped polycrystalline Si film on a selective diffused layer and semiconductor substrate. CONSTITUTION:An Si oxide film is adhered on the surface of the Si substrate 6 to provide a selective diffused layer 7 with the film as a mask laser to remove the Si oxide film for the adhesion of the non-doped polycrystalline Si 8 in a very thinness to such a degree that ohmic current flowing through the film can be neglected. Thereafter, an impurity doped polycrystalline Si film 9 is adhered with the Si oxide film 10 thereon to provide an electrode 11 by opening hole of a fixed window part. Thus, high cost ceramic package is unnecessitated owing to the use of a surface active layer rich in reliability. |
