| 摘要 |
PURPOSE:To inhibit the deviation of diode characteristics due to the deformation of the end surface of a semiconductor film on a lower electrode after etching the semiconductor film, and to improve yield by coating the forming section of the end surface of the semiconductor film with a SiO2 film. CONSTITUTION:The SiO2 films 7 are formed to the upper surfaces and peripheral sections of a large number of the lower electrodes 2 for extracting signals shaped in parallel onto a glass substrate 1, and through-hole sections 7a with inside diameters smaller than the line width of the lower electrodes 2 are formed to one sections on the lower electrodes 2. N type amorphous silicon films 6c, I type amorphous silicon films 6b, P type amorphous silicon films 6a and upper electrodes 5 are successively laminated and arranged onto the through-holes 7a of the SiO2 films 7, and a blocking diode is formed. Accordingly, contact with the lower electrodes 2 due to the deformation of the shape of the end surfaces of each amorphous silicon film 6 is removed, and the yield of the diode array is improved. |
