| 摘要 |
PURPOSE:To improve the degree of integration of a power transistor by a method wherein an opening for an electrode is formed to the first insulating film coating a semiconductor substrate and the electrode is shaped, and an emitter wiring layer and a collector wiring layer are formed onto the second insulating film coating the electrode. CONSTITUTION:An N<+> type layer 2, an N type epitaxial layer 3 and isolation layers 4 are shaped onto the P type semiconductor substrate 1. P type layers 5a, 5b as bases, N<+> type layers 6a, 6b as emitters and the collector contact layers 7a, 7b are formed to the surface of the N type layer 3 as a collector region. The oxide film 8 is molded to the surface of the semiconductor substrate 1, the opening sections are shaped, and the emitter electrodes, the base electrodes 9, the collector electrodes 10 and a wiring layer 14 for extracting the bases are formed. The second oxide film 11 is shaped to the surface, and the emitter electrode wiring layer 13 and the collector electrode 15 are formed in multilayer wiring structure. |
