| 摘要 |
PURPOSE:To improve the dielectric strength and high-frequency characteristics of the Schottky barrier gate type FET by forming a source and a drain shaped in self-matching form at a narrow interval in response to a refractory metal. CONSTITUTION:An N type low resistance layer is formed to the surface of an N type GaAs high resistance semiconductor substrate 1 by utilizing an insulator mask 2, the refractory metal layer of Mo, W, etc. is shaped to the whole surface, and a gate electrode 4' with an undercut section is formed through patterning by using a resist layer 12. The source and drain regions 5, 6 are molded in self-matching form at the narrow intervals x' to the gate by implanting S ions by utilizing the resist pattern. Accordingly, the Schottky barrier gate type FET having excellent dielectric strength and high-frequency characteristics can be obtained. |
