| 摘要 |
PURPOSE:To obtain a thin-film circuit element having high dielectric resistance and high reliability by forming film thickness in 250Angstrom or thinner by using Ta containing 10-25 atom% nitrogen atoms as the high resistivity films of the capacitor and resistor of the element. CONSTITUTION:In the hybrid IC in which a thin-film 2, which can be anodic- oxidized, is formed onto a substrate 1, a dielectric thin-film 3 is shaped through selective anodic oxidation and a Ta nitride thin-film 4 having high resistivity and electrodes 5 are formed, the capacitor shaped has 10<4>MOMEGA or higher in case of the application of 15V and measurement by bringing the nitrogen content of Ta nitride to 10-25 atom% and the film thickness to 250Angstrom or thinner. Area resistance after stabilizing heat treatment for four hrs. at 300 deg.C can also be brought to 600OMEGA/square or lower, and area resistance is also controlled easily. |
