| 摘要 |
PURPOSE:To allow the isolation of an NPN (or PNP) transistor, by surrounding a base region of an inverse NPN (or PNP) transistor on the same island region as I<2>L circuit by the same conductive type region reduced down to earth potential. CONSTITUTION:Emitters 6, 6', bases 1, 1' and collector 5 of inverse NPN transistors are formed on a semiconductor substrate 7 with the base region 1 perfectly surrounded by the same P type semiconductor region 3 as this region being reduced to earth potential. The high potential of the region 1 with hole injection is absorbed into the region 3 not reaching the region 1' without interference between the regions 1, 1'. |
