| 摘要 |
PURPOSE:To prevent Al from diffusing in an a-Si:H layer in a semiconductor device which is formed using the amorphous Si (a-Si:H) layer as an intermediate layer by a method wherein a titanium nitride layer is provided between the amorphous Si layer and an Al lower electrode. CONSTITUTION:A titanium nitride (TiN) layer 7 is provided between an Al lower electrode 2 and an a-Si:H layer 4. That is, Ti is sputtered on the 1-mum thick Al lower electrode 2 using the mixed sputtering gas of Ar and N2 of 10 %, the TiN layer is adhered on the Al lower electrode in a thickness of about 1000Angstrom by performing a reactive sputtering and thereafter, the a-Si:H layer 4 and an ITO layer 6 are formed. Thereby, Al is not diffused in the a-Si:H layer and the increase in an inverse current can be suppressed low during the use. |
