Method of separation of individual components in an integrated circuit - including application to CMOS transistors

摘要

Procedure for sepn. between elementary components in an integrated circuit comprises (a) coating the surface of silicon with a masking layer which is insensitive to thermal oxidn.; (b) forming channels in the silicon through the masking layer of about 1 micron width and a greater depth; (c) thermal oxidising until the silica formed re-closes the channels. In partic. in a bipolar integrated circuit a channel is obtd. of a different conductivity from the 'boxes' it includes; in a MOS integrated circuit the channel has a depth greater than the deepest diffusion to form the MOS transistors; in a SSI integrated circuit the channel has a depth equal to the thickness of the silicon layer deposed on the insulating substrate.