VERFAHREN ZUR HERSTELLUNG EINER MASKE FUER DIE MUSTERERZEUGUNG IN LACKSCHICHTEN MITTELS STRAHLUNGSLITHOGRAPHIE

摘要

The manufacture of semiconductor systems by means of radiation lithography requires low-stress masks when it is important to achieve very fine structures. In accordance with the invention, such a mask comprises a carrier of boron-doped silicon, a radiation absorbing pattern consisting of a double layer of different metals, such as molybdenum and tungsten, or a double layer of layers of the same metal, such as molybdenum, which are deposited in a different manner.