| 摘要 |
PURPOSE:To minimize the oscillation frequency change due to a load connected to an output terminal, by connecting a gate electrode and a source electrode of an FET commonly to each two active regions and connecting two drain electrodes only to respoective active regions. CONSTITUTION:One source electrode 25 and one gate electrode 26 are provided for an FET24 and two drain electrodes 271 and 272 are provided. N type high electron density GaAs layers 29 and 30 to be active regions of the FET are formed on a semiinsulation semiconductor substrate 28 formed with the electrodes of the FET. The electrode 26 is made of Al forming a Schottky barrier with, e.g. a GaAs layer of the active region and the source electrode 25 and the drain electrodes 271 and 272 are made of a metal in ohmic contact with the GaAs such as AuGe eutectic alloy with similar methods. The electrodes 26 and 25 are commonly connected to the regions 29 and 30 and the electrodes 271 and 272 are independently the regions 20 and 30 only. The electrode 271 is connected to an output side circuit 9 and the electrode 272 is connected to a feedback circuit and a high impedance line 31. |
