| 摘要 |
PURPOSE:To obtain a titled resist having high sensitivity, high resolution and good heat resisting shape retention, by incorporating a specific methacylic acid tertiary alkylester fluoride polymer. CONSTITUTION:By polymerizing tertiary alkylester fluoride obtained by reacting alcohol fluoride and methacrylic acid or its reacting derivative, 1million-15million weight average mol.wt. methacylic acid tertiary alkylester fluoride polymer (formulaI) is obtained. A resist solution in which the polymer is dissolved in a solvent such as aliphatic ketone and alcohol, etc. is applied on a supporting material to form a resist layer, and after the layer is irradiated with high energy beam to form a desired pattern, it is developed by using a solvent such as methyl isobutyl ketone, etc. By this way, a semiconductor element and a magnetic bubble element, etc. having <=1mum fine pattern are obtained. |
