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发明名称
VERFAHREN UND VORRICHTUNG ZUM DOTIEREN VON HALBLEITERMATERIAL
摘要
申请公布号
DE3118785(A1)
申请公布日期
1982.12.02
申请号
DE19813118785
申请日期
1981.05.12
申请人
SIEMENS AG
发明人
HOERSCHELMANN,KONSTANTIN,DIPL.-PHYS.;KAUSCHE,HELMOLD,DIPL.-PHYS.;SPAETH,WERNER,DIPL.-PHYS.
分类号
H01L21/22;C30B31/16;C30B31/22;H01L21/223;H01L21/265;(IPC1-7):C30B31/22;H01L21/24;H01L21/26;H01L31/04;H01L31/18;H05H1/46
主分类号
H01L21/22
代理机构
代理人
主权项
地址
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