| 摘要 |
PURPOSE:To enhance the operating speed and to ensure the degree of freedom of insulating isolation at an electron element by a method wherein a thin crystal film of alkaline earth metal, a fluorine compound being the insulators is made to grow epitaxially on a single crystal silicon substrate, and a semiconductor crystal thin film is made to grow epitaxially thereon. CONSTITUTION:The alkaline earth metal fluoride layer of calcium fluoride, etc., is evaporated on the Si semiconductor substrate 1, and when the heat treatment is performed for crystallization, the insulating crystal film 2 having the same Si crystal structure and having the resembled constant of crystal lattice is formed. When the semiconductor single crystal film 3 of Si, etc., is made to grow epitaxially thereon, the epitaxial layer 3 having favorable crystallinity can be obtained. The semiconductor layer and the insulating layer having favorable crystallinity can be laminated similarly and so forth. |
