| 摘要 |
In an integrated circuit having isolation regions 204 which form reverse biased PN junctions with the device regions 212, the isolation regions are also used as connections to the circuit ground and are provided with more heavily doped surface regions 202 of the same conductivity type. This improves the contact and reduces the connection impedance by counteracting depletion of the surface of the isolation regions due to thermal processes, subsequent to their formation. <IMAGE> |
