| 摘要 |
PURPOSE:To obtain the semiconductor device suitable for high integration by a method wherein the surface of an element is flattened without performing a step of flowing phosphorus at a high temperature. CONSTITUTION:SiO2, Si3N4 and SiO2 films are formed on a semiconductor substrate, an ion is implanted using these films as masks, an SiO2 film 37 is formed by performing an LOCOS, and then the insulating layer located on the gate region is removed while the Si3N4 film on a source and drain region is left over. Then, a gate oxide film, a polycrystalline Si layer and an SiO2 layer are formed, these layers are left over on the gate region alone, source and drain regions 42 and 42' are formed by performing an ion implantation, an SiO2 layer 44 is coated, a contact region is provided and then an Al wiring is provided. |
