发明名称 RINSING METHOD FOR EPITAXIAL GROWING APPARATUS
摘要 PURPOSE:To rinse an epitaxial growing system by utilizing a spattering effect of gas ions generated by electric discharge. CONSTITUTION:A quartz reaction tube 1 of an epitaxial apparatus is provided with an electric-discharge mechanism P consisting of a high-voltage power supply 2, a stabilized resistor 3 and positive and negative electrodes 4 and 5. When a high voltage is impressed on both electrodes 4 and 5, discharge begins, plasma is thereby generated in the tube, and particles having high energy, such as argon ions, in the ambience of plasma, are accelerated by a strong electric field in the vicinity of the negative electrode and strike at a carbon boat which is the negative electrode 5. These particles perform spattering of impurity atoms adsorbed on the surface of the boat, together with the atoms of the surface layer thereof. An effect of spattering occurs also when the particles strike at the wall of the reaction tube 1. The impurity atoms separated from the surfaces of the reaction tube 1 and the carbon boat 5 in this way are exhausted out of the reaction tube.
申请公布号 JPS57196520(A) 申请公布日期 1982.12.02
申请号 JP19810079993 申请日期 1981.05.28
申请人 FUJITSU KK 发明人 TAKAHASHI TSUGINORI
分类号 C30B19/00;H01L21/20;H01L21/205;H01L21/302;H01L21/3065 主分类号 C30B19/00
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