| 摘要 |
PURPOSE:To grow single crystals of excellent quality by forming a thin polycrystalline silicon beforehand on an amorphous substance, by enlarging the grain size of the silicon by the first annealing, and by further conducting the second annealing for an epitaxial growth layer. CONSTITUTION:A silicon oxide film 10 is provided on a semiconductor substrate 14 and a thin polycrystalline silicon layer 12 is deposited thereon. Then, the grain size of the polycrystalline silicon layer 12 is enlarged by laser beams 20 and thus a polycrystalline silicon layer 13 containing single crystals is obtained. Furthermore, an epitaxial layer 15 having a silicon as the main constituent is provided thereon, the polycrystalline silicon layers 13 and 15 are melted by the laser beams 20 so as to form single crystals, and thereby a single-crystal layer 16 is obtained. In this way, the formation of single crystals is advanced by the first annealing and then the single crystals of excellent quality are obtained in a very wide range. |
