| 摘要 |
PURPOSE:To simplify the formation of the mesa groove for the titled device by a method wherein the mesa groove is formed on a main surface of the semiconductor device located on the side where heavy metal diffusion was performed. CONSTITUTION:When SiO2 windows are provided, a window 3 for heavy metal diffusion and a window 2 for mesa groove formation are formed on the P layer side of a starting substrate. Then, the diffusion of heavy metal is performed from the side of the P layer. Then, a mesa groove is formed in such a manner that the heavy metal diffusing window located on the P layer side is protected by a selective coating such as wax and the like. The shape of the mesa groove is determined by the SiO2 window 2, and the mesa groove is to be formed uniformly. |
