| 摘要 |
PURPOSE:To diffuse the impurities contained in an impurity containing glass layer by a method wherein an insulating film is formed on the part which was exposed when an aperture was provided, and after a semiconductor layer and an impurity-containing glass layer have been formed in the window to be used for impurity diffusion, a heat treatment is performed. CONSTITUTION:An SiO2 film 12 is formed on a silicon semiconductor substrate 11, an aperture to be used for formation of an impurity diffusion layer is provided, a poly silicon layer 13 and a spin-on glass layer 14 are formed on the film 12, the poly silicon layer and the spin-on glass layer located on the SiO2 film 12 are removed by lapping, and the impurities are diffused into the semiconductor substrate 11 by performing a heat treatment using the spin-on glass layer 14 as the source of impurity diffusion. Through these procedures, even when crystallized glass 16 is generated on the spin-on glass layer 14, the crystallized glass appears on the surface by removing the glass layer 14, and the crystallized glass 16 can be removed by removing the poly silicon layer 13. |
