| 摘要 |
PURPOSE:To sharply reduce the equivalent resistance of a polycrystalline silicon wiring without changing the manufacturing process and to increase the signal propagation speed by a method wherein an aluminum wiring is superposed upon the silicon wiring. CONSTITUTION:When the read-out line of ROM is used, a polycrystalline silicon wiring 2, which will be used to connect the gate of a shunt transistor used when a lead-out is performed, and the aluminum wiring 1, which is located directly above the silicon wiring 2 in parallel with the polycrystalline silicon wiring layer 2 and performs an additional duty as a read-out wire, are provided and besides, a plurality of contacts 3, to be used to connect the polycrystalline silicon wiring layer 2 and the aluminum wiring 1, are provided. The plurality of contacts 3 are arranged between the two transistors located adjacent to each other. Accordingly, the resistance of the read-out wire 1 is reduced considerably by the aluminum, and this enables to increase the signal propagation speed substantially. |
