| 摘要 |
PURPOSE:To improve the workability by means of making the interfacial characteristics excellent, enabling the direct contact and preventing the step disconnection and the like by a method wherein the laminated layer and the high melting point metal are respectively extended to be the wiring layer on the thin insulating layer and the thick insulating layer. CONSTITUTION:For example each gate electrode of MISFET Q1, Q2, Q3 are formed into the two layered lamination comprising the multilayers and the molybdenum layers 10, 8, 9 extended on the field SiO2 film 2 as the upper layers. On the other hand, in the FET Q3, the direct contact element with the N<+> type diffused region 20 through the through hole CH1 is formed into the two layered lamination comprising the multicrystal silicon layer 6 and the molybdenum layer 9. The formation is similar to the N<+> type diffused region 21 in the FET Q1 while the wiring 8, 9, 10 comprise the molybdenum layer only extended from the respective gate electrode. |
