| 摘要 |
PURPOSE:To perform a clean removal on the surface of Si excercising an excellent controllability by a method wherein the substrate to be processed is placed on the target of a reactive sputter-etching device, and the above is processed in an inert gas plasma containing O2. CONSTITUTION:A film or plate 23, consisting of hydrocarbon resin such as polypropylene resin and the like is adhered on the target electrode 21 of the reactive sputter-etching device. Then, an Si substrate 24, which is the substrate to be processed, is placed on the above and processed in the plasma which was formed by introducing O2 or inert gas containing O2. As a result, resin 23 discharges active hydrogen into the plasma, this hydrogen is formed into a highly volatile SiOX by reducing the SiO2 on the surfaceof the substrate, and this helps to accelerate the Si etching. Accordingly, the removing work can be slowly performed on the exposed surface of the Si while the thickness of exfoliation is properly controlled. |
