发明名称 Sputtering method and apparatus utilizing improved ion source
摘要 Method and apparatus for sputtering an element with a magnetron plasma source where a plasma is formed between two electrostatic field defining surfaces of the source and a generator anode disposed adjacent the plasma ejects it toward the element to be sputtered. Various applications are described including selective coating of substrates of different electrical conductivity, substrate cleaning, ion milling, retrieval of expensive or dangerous coating materials, heating with little loss in the heat source, sputtering with reactive ions, sensitization or charge neutralization, and pumping of active gases.
申请公布号 US4361472(A) 申请公布日期 1982.11.30
申请号 US19810264551 申请日期 1981.05.18
申请人 VAC-TEC SYSTEMS, INC. 发明人 MORRISON, JR., CHARLES F.
分类号 H01J37/34;(IPC1-7):C23C15/00 主分类号 H01J37/34
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