| 摘要 |
PCT No. PCT/JP79/00302 Sec. 371 Date Aug. 1, 1980 Sec. 102(e) Date Jul. 30, 1980 PCT Filed Nov. 28, 1979 PCT Pub. No. WO80/01222 PCT Pub. Date Jun. 12, 1980.A method of manufacturing a semiconductor laser device to be used for an optical communication system. A semiconductor laser device, with a heat sink comprising a diamond, is arranged on a heat radiation stud, which also serves as part of a vessel for hermetically sealing the semiconductor laser element. The semiconductor laser element is bonded to the heat sink, using a gold alloy layer previously formed on the surface of the heat sink. The semiconductor laser element is mounted on the gold alloy layer, with the heat sink heated to a temperature lower than the eutectic point temperature of the gold alloy layer. Then, the semiconductor laser element and the heat sink in contact with it are heated up to a temperature higher than the eutectic point temperature of the gold alloy layer. The elements are then cooled, thereby the semiconductor laser element is bonded to the heat sink. Thus, the operating life characteristics of a semiconductor laser device are improved by this method of manufacturing.
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