| 摘要 |
PURPOSE:To improve the reliability of the semiconductor laser element by means of extending the lifetime thereof and eliminating the unfavorable influence arising from the transition region of the active layer interface by a method wherein the carrier concentration of the crystal growing layer comprising the semiconductor laser is controlled. CONSTITUTION:In the process laminating N type clad layer 2, active layer 3, P type clad layer 4 and cap layer 5 on an N type GaAs substrate, the transition region is formed by means of mixing the impurities in the N type clad layer 2 in the active layer 3. This transient region is formed likewise on the interface between the active layer 3 and the P type clad layer 4. In order to settle this problem, the carrier concentration n2 of the active layer 3 is specified to be higher than the carrier concentration n1 of the N type clad layer 2 while the carrier concentration n3 of the P type clad layer 4 is specified to be higher than the carrier concentration n2 of the active layer 3, i.e. the transition region between the active layer 3 and the P type clad layer 4 may be eliminated by means of specifying the carrier concentration to be n1<n2<n3. |
