| 发明名称 |
DRY ETCHING OF METAL FILM |
| 摘要 |
<p>DRY ETCHING OF METAL FILM A process for dry etching an aluminum film and an aluminum based film in the production of a semiconductor device, wherein a mixed gas of carbon chloride and boron chloride is used as an etchant gas.</p> |
| 申请公布号 |
CA1136525(A) |
申请公布日期 |
1982.11.30 |
| 申请号 |
CA19800357204 |
申请日期 |
1980.07.29 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
TAKADA, TADAKAZU;TOKITOMO, KAZUO;HOSHINO, HITOSHI |
| 分类号 |
C23F4/00;H01L21/02;H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
C23F4/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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