SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To reduce the area occupied by the memory and the delay time by a method wherein one electrode of the capacitor comprises the semiconductor while the gate electrode of MISFET comprises the high melting point metal containing semiconductor in the dynamic RAM. CONSTITUTION:For example, the dynamic RAM is made of the memory cell M-CEL1, M-CEL2 comprising the MISFET and the capacitor making use of the P type silicon substrate 101. The memory cell M-CEL1 is provided with the N<+> type regions 119 and 120 sellectively arranged in the substrate 101 respectively as the source and the drain besides the MISFET which is provided with the multilayer element comprising the multicrystal Si layer 114 and Si containing Mo layer 129 formed through the intermediary of the gate SiO2 film 109 on the furface between said regions 119 and 120 as the gate electrode and the storage capacity which is provided with the multicrystal Si layer 108 as one electrode and the inverse layer under the gate film 106 to be the dielectric as the other electrode. Through these procedures, the area occupied by the memory and the delay time may be reduced.