| 摘要 |
<p>Apparatus and method are provided for developing a COP resist used in x-ray lithography apparatus. The lithography apparatus uses an x-ray target made of tungsten and the apparatus is operated to generate the tungsten M-line, this line being at a wavelength which will be absorbed by the resist normally used in lithography. To develop the resist, which was initially designed for use in an electron beam lithography, a developing method is used in which an initial short development with a high concentration is first carried out followed by a longer, full development with a concentration which is approximately the lowest at which complete development will take place.</p> |
