| 摘要 |
PURPOSE:To obtain the oxide film isolated structure without having an isolation leak for the titled device by a method wherein an oxide film is formed in the groove, on which an etching was performed using an Si3N4 film as a mask, and a heat treatment is performed in a nitrogenous atmosphere in the state wherein the oxide film is left over by ion implantation performed through the oxide film. CONSTITUTION:An Si3N4 layer 15 is provided on the epitaxial layer 13 of a single crystal Si substrate 11 through the intermediary of a thin SiO2 layer 14, and a groove 16 is formed by performing an etching using the layer 15 as a mask. Then, a thin oxide film 17 is formed in the exposed groove 16, an ion is implanted in the groove through the film 17 using the Si3N4 film 15 as a mask, and after an inversion preventing layer 18 has been formed by performing a heat treatment in a nitrogenous atmosphere in the state wherein an oxide film 17 is left over, an insulation isolated layer 19 is formed by performing an oxidation, and an oxide film isolated structure is obtained by removing the Si3N4-film 15. Accordingly, as the contact of the silicon surface and the high- temperature nitrogenous gas is cut off by the oxide film, the generation of crystal defect and the segregation of injected impurities can be prevented, thereby enabling to obtain an excellent oxide film isolated structure without having an isolation leak. |
